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Jump to: Article | Conference or Workshop Item Number of items: 3. ArticleSupono, I., Urresti, J., Castellazzi, Alberto and Flores, D. (2014) Overload robust IGBT design for SSCB application. Microelectronics Reliability, 54 (9/10). pp. 1906-1910. ISSN 0026-2714 Conference or Workshop ItemFayyaz, Asad, Castellazzi, Alberto, Romano, G., Riccio, M., Urresti, J. and Wright, N. (2017) Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs. In: 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 28 May-1 June 2017, Sapporo, Japan. Fayyaz, Asad, Castellazzi, Alberto, Romano, Gianpaolo, Riccio, Michele, Urresti, J. and Wright, Nick (2016) UIS failure mechanism of SiC power MOSFETs. In: 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016), 7-9 November 2016, Fayetteville, Arkansas, USA. |
