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Number of items: 3. Fayyaz, Asad, Castellazzi, Alberto, Romano, G., Riccio, M., Urresti, J. and Wright, N. (2017) Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs. In: 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 28 May-1 June 2017, Sapporo, Japan. Fayyaz, Asad, Castellazzi, Alberto, Romano, Gianpaolo, Riccio, Michele, Urresti, J. and Wright, Nick (2016) UIS failure mechanism of SiC power MOSFETs. In: 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016), 7-9 November 2016, Fayetteville, Arkansas, USA. Supono, I., Urresti, J., Castellazzi, Alberto and Flores, D. (2014) Overload robust IGBT design for SSCB application. Microelectronics Reliability, 54 (9/10). pp. 1906-1910. ISSN 0026-2714 |
