• Login
• Admin

Soundararajah, Q.Y., Webster, R.F., Griffiths, I.J., Novikov, S.V., Foxon, C.T. and Cherns, D. (2018) Composition and strain relaxation of In x Ga1−x N graded core–shell nanorods. Nanotechnology, 29 (40). 405706/1-405706/8. ISSN 1361-6528

Cheng, Tin S., Summerfield, Alex, Mellor, Christopher J., Davies, Andrew, Khlobystov, Andrei N., Eaves, Laurence, Foxon, C.T., Beton, Peter H. and Novikov, Sergei V. (2018) High-temperature molecular beam epitaxy of hexagonal boron nitride layers. Journal of Vacuum Science and Technology B, 36 (2). 02D103-1. ISSN 2166-2754

Davies, Andrew, Albar, J.D., Summerfield, Alex, Thomas, James C., Cheng, Tin S., Korolkov, Vladimir V., Stapleton, Emily, Wrigley, James, Goodey, Nathan L., Mellor, Christopher J., Khlobystov, Andrei N., Watanabe, Kenji, Taniguchi, Takashi, Foxon, C.T., Eaves, Laurence, Novikov, Sergei V. and Beton, Peter H. (2018) Lattice-matched epitaxial graphene grown on boron nitride. Nano Letters, 18 (1). pp. 498-504. ISSN 1530-6992

Novikov, Sergei V. and Foxon, C.T. (2017) Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources. Journal of Crystal Growth, 477 . pp. 154-158. ISSN 0022-0248

Vaisakh, C.P., Foxon, C.T., Novikov, Sergei V. and Kini, R.N. (2017) Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi. Semiconductor Science and Technology, 32 (12). 125009/1-125009/6. ISSN 1361-6641

Albar, J.D., Summerfield, Alex, Cheng, Tin S., Davies, Andrew, Smith, E.F., Khlobystov, Andrei N., Mellor, C.J., Taniguchi, Takashi, Watanabe, Kenji, Foxon, C.T., Eaves, Laurence, Beton, Peter H. and Novikov, Sergei V. (2017) An atomic carbon source for high temperature molecular beam epitaxy of graphene. Scientific Reports, 7 (1). 6598/1-6598/8. ISSN 2045-2322

Novikov, Sergei V., Kent, A.J. and Foxon, C.T. (2017) Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN. Progress in Crystal Growth and Characterization of Metals, 63 (2). pp. 25-39. ISSN 0960-8974

Vuong, T.Q.P., Cassabois, G., Valvin, P., Rousseau, E., Summerfield, A., Mellor, C.J., Cho, Y., Cheng, T.S., Albar, J.D., Eaves, Laurence, Foxon, C.T., Beton, Peter H., Novikov, Sergei V. and Gil, B. (2017) Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy. 2D Materials, 4 (2). 021023/1-021023/7. ISSN 2053-1583

Sarney, Wendy L., Svensson, Stefan P., Ting, Min, Segercrantz, Natalie, Walukiewicz, Wladek, Yu, Kin Man, Martin, Robert W., Novikov, Sergei V. and Foxon, C.T. (2017) Intermixing studies in GaN_1−xSb_x highly mismatched alloys. Applied Optics, 56 (3). B64-B69. ISSN 2155-3165

Novikov, Sergei V., Staddon, Christopher R., Sahonta, S-L, Oliver, R.A., Humphreys, C.J. and Foxon, C.T. (2016) Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth . ISSN 0022-0248

Gohil, T., Whale, J., Lioliou, G., Novikov, Sergei V., Foxon, C.T., Kent, A.J. and Barnett, A.M. (2016) X-ray detection with zinc-blende (cubic) GaN Schottky diodes. Scientific Reports, 6 . 29535/1-29535/5. ISSN 2045-2322

Yu, K.M., Sarney, W.L., Novikov, Sergei V., Segercrantz, N., Ting, M., Shaw, M., Svensson, S.P., Martin, R.W., Walukiewicz, W. and Foxon, C.T. (2016) Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties. Semiconductor Science and Technology, 31 (8). 083001. ISSN 1361-6641

Qian, H., Lee, K.B., Vajargah, S.Hosseini, Novikov, S.V., Guiney, I., Zhang, S., Zaidi, Z.H., Jiang, S., Wallis, D.J., Foxon, C.T., Humphreys, C.J. and Houston, P.A. (2016) Characterization of p-GaN1−xAsx/n-GaN PN junction diodes. Semiconductor Science and Technology, 31 (6). 065020. ISSN 0268-1242

Novikov, Sergei V., Staddon, C.R., Sahonta, S-L, Oliver, R.A., Humphreys, C.J. and Foxon, C.T. (2016) Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source. Physica Status Solidi C: Current Topics in Solid State Physics, 13 (5-6). pp. 217-220. ISSN 1862-6351

Segercrantz, N., Yu, K.M., Ting, M., Sarney, W.L., Svensson, S.P., Novikov, S.V., Foxon, C.T. and Walukiewicz, W. (2015) Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range. Applied Physics Letters, 107 (14). 142104/1-142104/4. ISSN 1077-3118

Fay, Mike W., Han, Y., Novikov, Sergei V., Edmonds, K.W., Gallagher, B.L., Campion, R.P., Staddon, C.R., Foxon, C.T. and Brown, Paul D. (2008) Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs. In: Microscopy of semiconducting materials 2007: proceedings of the 15th conference, 2-5 April 2007, Cambridge, UK. Springer proceedings in physics (120). Springer-Verlag, Dordrecht, pp. 103-106. ISBN 9781402086144

Han, Y., Fay, Mike W., Brown, Paul D., Novikov, Sergei V., Edmonds, K.W., Gallagher, B.L., Campion, R.P. and Foxon, C.T. (2005) Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux. In: Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer proceedings in physics (107). Springer-Verlag, Berlin, pp. 155-158. ISBN 9783540319146

Fay, Mike W., Han, Y., Novikov, Sergei V., Edmonds, K.W., Wang, K., Gallagher, B.L., Campion, R.P., Foxon, C.T. and Brown, Paul D. (2005) Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy. In: Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer proceedings in physics (107). Springer-Verlag, Berlin, pp. 143-146. ISBN 9783540319146

Fay, Mike W., Harrison, Ian, Larkins, Eric C., Novikov, Sergei V., Foxon, C.T. and Brown, Paul D. (2004) TEM assessment of As-doped GaN epitaxial layers grown on sapphire. In: Electron Microscopy and Analysis 2003: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003. Institute of Physics conference series (179). Institute of Physics Publishing, Bristol, pp. 23-26. ISBN 0750309679