Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition rangeTools Segercrantz, N. and Yu, K.M. and Ting, M. and Sarney, W.L. and Svensson, S.P. and Novikov, S.V. and Foxon, C.T. and Walukiewicz, W. (2015) Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range. Applied Physics Letters, 107 (14). 142104/1-142104/4. ISSN 1077-3118
AbstractIn this letter, we study the optical properties of GaN1�xSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 �C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model that is applicable to highly mismatched alloys such as GaN1�xSbx in the entire composition range. The presented model allows us to more accurately determine the band gap as well as the band
Actions (Archive Staff Only)
|
From the 1st Oct 2021, the research publications and student eTheses of University of Nottingham Ningbo China authors will be handled through the UNNC Research Information System (RIS).
If you are a UNNC author, please login to the UNNC RIS in order to deposit articles and etheses after this date, or contact UNNCRIS@nottingham.edu.cn if you have any enquiries in regard to this change.
If you are a UNNC author, please login to the UNNC RIS in order to deposit articles and etheses after this date, or contact UNNCRIS@nottingham.edu.cn if you have any enquiries in regard to this change.
Tools
Tools
