Properties of homo- and hetero-Schottky junctions from first principle calculations

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Greer, James C., Blom, Anders and Ansari, Lida (2018) Properties of homo- and hetero-Schottky junctions from first principle calculations. Journal of Physics: Condensed Matter, 30 (41). 414003/1-414003/8. ISSN 1361-648X

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Abstract

Electronic structure calculations for a homo-material semimetal (thick Sn)/semiconductor (thin Sn) heterodimensional junction and two conventional metal (Ag or Pt)/silicon hetero-material junctions are performed. Charge distributions and local density of states are examined to compare the physics of junctions formed by quantum confinement in a homo-material, heterodimensional semimetal junction with that of conventional Schottky hetero-material junctions. Relative contributions to the Schottky barrier heights are described in terms of the interface dipoles arising due to charge transfer at the interface and the effects of metal induced gap states extending into the semiconducting regions. Although the importance of these physical mechanisms vary for the three junctions, a single framework describing the junction energetics captures the behaviors of both the heterodimensional semimetal junction and the more conventional metal/semiconductor junctions.

Item Type: Article
Additional Information: This is an author-created, un-copyedited version of an article published in Journal of Physics: Condensed Matter. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/1361-648X/aadbed.
Schools/Departments: University of Nottingham Ningbo China > Faculty of Science and Engineering > Department of Electrical and Electronic Engineering
Identification Number: https://doi.org/10.1088/1361-648X/aadbed
Related URLs:
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http://dx.doi.org/10.1088/1361-648X/aadbedPublisher
Depositing User: Yu, Tiffany
Date Deposited: 08 Nov 2018 13:49
Last Modified: 24 Sep 2019 04:30
URI: https://eprints.nottingham.ac.uk/id/eprint/55485

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