Triazine-based graphitic carbon nitride: a two-dimensional semiconductorTools Siller-Algara, Gerardo, Severin, Nikolai, Chong, Samantha Y., Björkman, Torbjörn, Palgrave, Robert G., Laybourn, Andrea, Antonietti, Markus, Khimyak, Yaroslav Z., Krasheninnikov, Arkady V., Rabe, Jürgen P., Kaiser, Ute, Cooper, Andrew I., Thomas, Arne and Bojdys, Michael J. (2014) Triazine-based graphitic carbon nitride: a two-dimensional semiconductor. Angewandte Chemie International Edition, 53 (29). pp. 7540-7455. ISSN 1521-3773 Full text not available from this repository.AbstractGraphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes.
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