Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMnTools Galceran, R., Fina, I., Cisneros-Fernandez, J., Bozzo, B., Frontera, C., Lopez-Mir, L., Deniz, H., Park, K-W., Park, B-G., Balcells, Ll., Marti, X., Jungwirth, T. and Martinez, B. (2016) Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn. Scientific Reports, 6 . 35471/1-35471/6. ISSN 2045-2322 Full text not available from this repository.
Official URL: http://www.nature.com/articles/srep35471
AbstractAntiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néeltemperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit(Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport
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