Highly-mismatched InAs/InSe heterojunction diodes

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Velichko, A., Kudrynskyi, Zakhar R., Di Paola, D.M., Makarovsky, Oleg, Kesaria, M., Krier, A., Sandall, I.C., Tan, C.H., Kovalyuk, Zakhar D. and Patanè, Amalia (2016) Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109 (18). 182115/1-182115/4. ISSN 1077-3118

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Abstract

We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of 10[superscript]4 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.

Item Type: Article
RIS ID: https://nottingham-repository.worktribe.com/output/830032
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1063/1.4967381
Depositing User: Eprints, Support
Date Deposited: 04 Jan 2017 13:38
Last Modified: 04 May 2020 18:22
URI: https://eprints.nottingham.ac.uk/id/eprint/39578

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