Piezo voltage controlled planar hall effect devices

Tools

Zhang, Bao, Meng, Kang-Kang, Yang, Mei-Yin, Edmonds, K.W., Zhang, Hao, Cai, Kai-Ming, Sheng, Yu, Zhang, Nan, Ji, Yang, Zhao, Jian-Hua, Zheng, Hou-Zhi and Wang, Kai-You (2016) Piezo voltage controlled planar hall effect devices. Scientific Reports, 6 . 28458/1-28458/6. ISSN 2045-2322

Full text not available from this repository.

Official URL: http://www.nature.com/articles/srep28458

Abstract

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

Item Type:

Article

RIS ID:

https://nottingham-repository.worktribe.com/output/794022

Schools/Departments:

University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy

Identification Number:

https://doi.org/10.1038/srep28458

Related URLs: