Highly-mismatched InAs/InSe heterojunction diodesTools Velichko, A. and Kudrynskyi, Zakhar R. and Di Paola, D.M. and Makarovsky, Oleg and Kesaria, M. and Krier, A. and Sandall, I.C. and Tan, C.H. and Kovalyuk, Zakhar D. and Patanè, Amalia (2016) Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109 (18). 182115/1-182115/4. ISSN 1077-3118 Full text not available from this repository.
Official URL: http://aip.scitation.org/doi/10.1063/1.4967381
AbstractWe report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of 10[superscript]4 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.
Actions (Archive Staff Only)
|
From the 1st Oct 2021, the research publications and student eTheses of University of Nottingham Ningbo China authors will be handled through the UNNC Research Information System (RIS).
If you are a UNNC author, please login to the UNNC RIS in order to deposit articles and etheses after this date, or contact Library@nottingham.edu.cn if you have any enquiries in regard to this change.
If you are a UNNC author, please login to the UNNC RIS in order to deposit articles and etheses after this date, or contact Library@nottingham.edu.cn if you have any enquiries in regard to this change.
Tools
Tools
