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Jump to: Article | Conference or Workshop Item Number of items: 5. ArticleFayyaz, Asad and Romano, Gianpaolo and Urresti, Jesus and Riccio, Michele and Castellazzi, Alberto and Irace, Andrea and Wright, Nick (2017) A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs. Energies, 10 (4). 452/1-452/15. ISSN 1996-1073 Romano, Gianpaolo and Fayyaz, Asad and Riccio, Michele and Maresca, Luca and Breglio, Giovanni and Castellazzi, Alberto and Irace, Andrea (2016) A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics, 4 (3). pp. 978-987. ISSN 2168-6785 Conference or Workshop ItemCastellazzi, Alberto and Fayyaz, Asad and Romano, Gianpaolo and Riccio, Michele and Irace, Andrea and Urresti-Ibanez, Jesus and Wright, Nick (2017) Transient out-of-SOA robustness of SiC power MOSFETs. In: 2017 IEEE International Reliability Physics Symposium (IRPS 2017), 2-6 Apr 2017, Monterey, California, USA. Fayyaz, Asad and Castellazzi, Alberto and Romano, Gianpaolo and Riccio, Michele and Urresti, J. and Wright, Nick (2016) UIS failure mechanism of SiC power MOSFETs. In: 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016), 7-9 November 2016, Fayetteville, Arkansas, USA. Romano, Gianpaolo and Riccio, Michele and Maresca, Luca and Fayyaz, Asad and Castellazzi, Alberto (2016) Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs. In: 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 12-16 Jun 2016, Prague, Czech Republic. |
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