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Number of items: 5. Castellazzi, Alberto, Fayyaz, Asad, Romano, Gianpaolo, Riccio, Michele, Irace, Andrea, Urresti-Ibanez, Jesus and Wright, Nick (2017) Transient out-of-SOA robustness of SiC power MOSFETs. In: 2017 IEEE International Reliability Physics Symposium (IRPS 2017), 2-6 Apr 2017, Monterey, California, USA. Fayyaz, Asad, Romano, Gianpaolo, Urresti, Jesus, Riccio, Michele, Castellazzi, Alberto, Irace, Andrea and Wright, Nick (2017) A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs. Energies, 10 (4). 452/1-452/15. ISSN 1996-1073 Fayyaz, Asad, Castellazzi, Alberto, Romano, Gianpaolo, Riccio, Michele, Urresti, J. and Wright, Nick (2016) UIS failure mechanism of SiC power MOSFETs. In: 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016), 7-9 November 2016, Fayetteville, Arkansas, USA. Romano, Gianpaolo, Fayyaz, Asad, Riccio, Michele, Maresca, Luca, Breglio, Giovanni, Castellazzi, Alberto and Irace, Andrea (2016) A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics, 4 (3). pp. 978-987. ISSN 2168-6785 Romano, Gianpaolo, Riccio, Michele, Maresca, Luca, Fayyaz, Asad and Castellazzi, Alberto (2016) Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs. In: 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 12-16 Jun 2016, Prague, Czech Republic. |
