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Number of items: 1. Qian, H. and Lee, K.B. and Vajargah, S.Hosseini and Novikov, S.V. and Guiney, I. and Zhang, S. and Zaidi, Z.H. and Jiang, S. and Wallis, D.J. and Foxon, C.T. and Humphreys, C.J. and Houston, P.A. (2016) Characterization of p-GaN1−xAsx/n-GaN PN junction diodes. Semiconductor Science and Technology, 31 (6). 065020. ISSN 0268-1242 |