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Jump to: 2016 Number of items: 1. 2016Qian, H. and Lee, K.B. and Vajargah, S.Hosseini and Novikov, S.V. and Guiney, I. and Zhang, S. and Zaidi, Z.H. and Jiang, S. and Wallis, D.J. and Foxon, C.T. and Humphreys, C.J. and Houston, P.A. (2016) Characterization of p-GaN1−xAsx/n-GaN PN junction diodes. Semiconductor Science and Technology, 31 (6). 065020. ISSN 0268-1242 |
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If you are a UNNC author, please login to the UNNC RIS in order to deposit articles and etheses after this date, or contact UNNCRIS@nottingham.edu.cn if you have any enquiries in regard to this change.
