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Prando, G.A., Orsi Gordo, V., Puustinen, J., Hilska, J., Alghamdi, H.M., Som, G., Gunes, M., Akyol, M., Souto, S., Rodrigues, A.D., Galeti, H.V.A., Henini, M., Gobato, Y.Galvão and Guina, M. (2018) Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 33 (8). 084002. ISSN 0268-1242

Galeti, H.V.A., Galvao Gobato, Y., Brasil, M.J.S.P., Taylor, D. and Henini, M. (2018) Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes. Journal of Electronic Materials, 47 (3). pp. 1780-1785. ISSN 1543-186X

Gordo, V. Orsi, Gobato, Y.G., Galeti, H.V.A., Brasil, M.J.S.P., Taylor, David and Henini, M. (2017) Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices. Journal of Electronic Materials, 46 (7). pp. 3851-3856. ISSN 1543-186X

Rodrigues, D.H., Brasil, M.J.S.P., Orlita, M., Kunc, J., Galeti, H.V.A., Henini, M., Taylor, D. and H.V.A., Y.G. (2016) Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes. Journal of Physics D: Applied Physics, 49 (16). ISSN 1361-6463

Herval, L.K S., Galeti, H.V.A., Orsi Gordo, V., Galvao Gobato, Y., Brasil, M.J.S.P., Taylor, D. and Henini, M. (2014) Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well. In: 29th Symposium on Microelectronics Technology and Devices (SBMicro) 2014, 1-5 September 2014, Aracaju-Sergipe, Brazil.