Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodesTools Rodrigues, D.H. and Brasil, M.J.S.P. and Orlita, M. and Kunc, J. and Galeti, H.V.A. and Henini, M. and Taylor, D. and H.V.A., Y.G. (2016) Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes. Journal of Physics D: Applied Physics, 49 (16). ISSN 1361-6463 Full text not available from this repository.AbstractWe have investigated the polarization-resolved electroluminescence (EL) of a p–i–n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices.
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