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Number of items: 9.

Qian, H. and Lee, K.B. and Vajargah, S.Hosseini and Novikov, S.V. and Guiney, I. and Zhang, S. and Zaidi, Z.H. and Jiang, S. and Wallis, D.J. and Foxon, C.T. and Humphreys, C.J. and Houston, P.A. (2016) Characterization of p-GaN1−xAsx/n-GaN PN junction diodes. Semiconductor Science and Technology, 31 (6). 065020. ISSN 0268-1242

Segercrantz, N. and Yu, K.M. and Ting, M. and Sarney, W.L. and Svensson, S.P. and Novikov, S.V. and Foxon, C.T. and Walukiewicz, W. (2015) Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range. Applied Physics Letters, 107 (14). 142104/1-142104/4. ISSN 1077-3118

Novikov, Sergei V. and Staddon, Christopher R. and Sahonta, S-L and Oliver, R.A. and Humphreys, C.J. and Foxon, C.T. (2016) Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth . ISSN 0022-0248

Yu, K.M. and Sarney, W.L. and Novikov, Sergei V. and Segercrantz, N. and Ting, M. and Shaw, M. and Svensson, S.P. and Martin, R.W. and Walukiewicz, W. and Foxon, C.T. (2016) Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties. Semiconductor Science and Technology, 31 (8). 083001. ISSN 1361-6641

Novikov, Sergei V. and Staddon, C.R. and Sahonta, S-L and Oliver, R.A. and Humphreys, C.J. and Foxon, C.T. (2016) Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source. Physica Status Solidi C: Current Topics in Solid State Physics, 13 (5-6). pp. 217-220. ISSN 1862-6351

Fay, Mike W. and Han, Y. and Novikov, Sergei V. and Edmonds, K.W. and Gallagher, B.L. and Campion, R.P. and Staddon, C.R. and Foxon, C.T. and Brown, Paul D. (2008) Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs. In: Microscopy of semiconducting materials 2007: proceedings of the 15th conference, 2-5 April 2007, Cambridge, UK. Springer proceedings in physics (120). Springer-Verlag, Dordrecht, pp. 103-106. ISBN 9781402086144

Han, Y. and Fay, Mike W. and Brown, Paul D. and Novikov, Sergei V. and Edmonds, K.W. and Gallagher, B.L. and Campion, R.P. and Foxon, C.T. (2005) Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux. In: Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer proceedings in physics (107). Springer-Verlag, Berlin, pp. 155-158. ISBN 9783540319146

Fay, Mike W. and Han, Y. and Novikov, Sergei V. and Edmonds, K.W. and Wang, K. and Gallagher, B.L. and Campion, R.P. and Foxon, C.T. and Brown, Paul D. (2005) Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy. In: Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer proceedings in physics (107). Springer-Verlag, Berlin, pp. 143-146. ISBN 9783540319146

Fay, Mike W. and Harrison, Ian and Larkins, Eric C. and Novikov, Sergei V. and Foxon, C.T. and Brown, Paul D. (2004) TEM assessment of As-doped GaN epitaxial layers grown on sapphire. In: Electron Microscopy and Analysis 2003: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003. Institute of Physics conference series (179). Institute of Physics Publishing, Bristol, pp. 23-26. ISBN 0750309679

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