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Jump to: Article | Book Section Number of items: 19. ArticleSoundararajah, Q.Y. and Webster, R.F. and Griffiths, I.J. and Novikov, S.V. and Foxon, C.T. and Cherns, D. (2018) Composition and strain relaxation of In x Ga1−x N graded core–shell nanorods. Nanotechnology, 29 (40). 405706/1-405706/8. ISSN 1361-6528 Cheng, Tin S. and Summerfield, Alex and Mellor, Christopher J. and Davies, Andrew and Khlobystov, Andrei N. and Eaves, Laurence and Foxon, C.T. and Beton, Peter H. and Novikov, Sergei V. (2018) High-temperature molecular beam epitaxy of hexagonal boron nitride layers. Journal of Vacuum Science and Technology B, 36 (2). 02D103-1. ISSN 2166-2754 Davies, Andrew and Albar, J.D. and Summerfield, Alex and Thomas, James C. and Cheng, Tin S. and Korolkov, Vladimir V. and Stapleton, Emily and Wrigley, James and Goodey, Nathan L. and Mellor, Christopher J. and Khlobystov, Andrei N. and Watanabe, Kenji and Taniguchi, Takashi and Foxon, C.T. and Eaves, Laurence and Novikov, Sergei V. and Beton, Peter H. (2018) Lattice-matched epitaxial graphene grown on boron nitride. Nano Letters, 18 (1). pp. 498-504. ISSN 1530-6992 Novikov, Sergei V. and Foxon, C.T. (2017) Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources. Journal of Crystal Growth, 477 . pp. 154-158. ISSN 0022-0248 Vaisakh, C.P. and Foxon, C.T. and Novikov, Sergei V. and Kini, R.N. (2017) Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi. Semiconductor Science and Technology, 32 (12). 125009/1-125009/6. ISSN 1361-6641 Albar, J.D. and Summerfield, Alex and Cheng, Tin S. and Davies, Andrew and Smith, E.F. and Khlobystov, Andrei N. and Mellor, C.J. and Taniguchi, Takashi and Watanabe, Kenji and Foxon, C.T. and Eaves, Laurence and Beton, Peter H. and Novikov, Sergei V. (2017) An atomic carbon source for high temperature molecular beam epitaxy of graphene. Scientific Reports, 7 (1). 6598/1-6598/8. ISSN 2045-2322 Novikov, Sergei V. and Kent, A.J. and Foxon, C.T. (2017) Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN. Progress in Crystal Growth and Characterization of Metals, 63 (2). pp. 25-39. ISSN 0960-8974 Vuong, T.Q.P. and Cassabois, G. and Valvin, P. and Rousseau, E. and Summerfield, A. and Mellor, C.J. and Cho, Y. and Cheng, T.S. and Albar, J.D. and Eaves, Laurence and Foxon, C.T. and Beton, Peter H. and Novikov, Sergei V. and Gil, B. (2017) Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy. 2D Materials, 4 (2). 021023/1-021023/7. ISSN 2053-1583 Sarney, Wendy L. and Svensson, Stefan P. and Ting, Min and Segercrantz, Natalie and Walukiewicz, Wladek and Yu, Kin Man and Martin, Robert W. and Novikov, Sergei V. and Foxon, C.T. (2017) Intermixing studies in GaN_1−xSb_x highly mismatched alloys. Applied Optics, 56 (3). B64-B69. ISSN 2155-3165 Novikov, Sergei V. and Staddon, Christopher R. and Sahonta, S-L and Oliver, R.A. and Humphreys, C.J. and Foxon, C.T. (2016) Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth . ISSN 0022-0248 Gohil, T. and Whale, J. and Lioliou, G. and Novikov, Sergei V. and Foxon, C.T. and Kent, A.J. and Barnett, A.M. (2016) X-ray detection with zinc-blende (cubic) GaN Schottky diodes. Scientific Reports, 6 . 29535/1-29535/5. ISSN 2045-2322 Yu, K.M. and Sarney, W.L. and Novikov, Sergei V. and Segercrantz, N. and Ting, M. and Shaw, M. and Svensson, S.P. and Martin, R.W. and Walukiewicz, W. and Foxon, C.T. (2016) Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties. Semiconductor Science and Technology, 31 (8). 083001. ISSN 1361-6641 Qian, H. and Lee, K.B. and Vajargah, S.Hosseini and Novikov, S.V. and Guiney, I. and Zhang, S. and Zaidi, Z.H. and Jiang, S. and Wallis, D.J. and Foxon, C.T. and Humphreys, C.J. and Houston, P.A. (2016) Characterization of p-GaN1−xAsx/n-GaN PN junction diodes. Semiconductor Science and Technology, 31 (6). 065020. ISSN 0268-1242 Novikov, Sergei V. and Staddon, C.R. and Sahonta, S-L and Oliver, R.A. and Humphreys, C.J. and Foxon, C.T. (2016) Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source. Physica Status Solidi C: Current Topics in Solid State Physics, 13 (5-6). pp. 217-220. ISSN 1862-6351 Segercrantz, N. and Yu, K.M. and Ting, M. and Sarney, W.L. and Svensson, S.P. and Novikov, S.V. and Foxon, C.T. and Walukiewicz, W. (2015) Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range. Applied Physics Letters, 107 (14). 142104/1-142104/4. ISSN 1077-3118 Book SectionFay, Mike W. and Han, Y. and Novikov, Sergei V. and Edmonds, K.W. and Gallagher, B.L. and Campion, R.P. and Staddon, C.R. and Foxon, C.T. and Brown, Paul D. (2008) Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs. In: Microscopy of semiconducting materials 2007: proceedings of the 15th conference, 2-5 April 2007, Cambridge, UK. Springer proceedings in physics (120). Springer-Verlag, Dordrecht, pp. 103-106. ISBN 9781402086144 Han, Y. and Fay, Mike W. and Brown, Paul D. and Novikov, Sergei V. and Edmonds, K.W. and Gallagher, B.L. and Campion, R.P. and Foxon, C.T. (2005) Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux. In: Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer proceedings in physics (107). Springer-Verlag, Berlin, pp. 155-158. ISBN 9783540319146 Fay, Mike W. and Han, Y. and Novikov, Sergei V. and Edmonds, K.W. and Wang, K. and Gallagher, B.L. and Campion, R.P. and Foxon, C.T. and Brown, Paul D. (2005) Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy. In: Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer proceedings in physics (107). Springer-Verlag, Berlin, pp. 143-146. ISBN 9783540319146 Fay, Mike W. and Harrison, Ian and Larkins, Eric C. and Novikov, Sergei V. and Foxon, C.T. and Brown, Paul D. (2004) TEM assessment of As-doped GaN epitaxial layers grown on sapphire. In: Electron Microscopy and Analysis 2003: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003. Institute of Physics conference series (179). Institute of Physics Publishing, Bristol, pp. 23-26. ISBN 0750309679 |
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