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Article

Galeti, H.V.A., Galvao Gobato, Y., Brasil, M.J.S.P., Taylor, D. and Henini, M. (2018) Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes. Journal of Electronic Materials, 47 (3). pp. 1780-1785. ISSN 1543-186X

Gordo, V. Orsi, Gobato, Y.G., Galeti, H.V.A., Brasil, M.J.S.P., Taylor, David and Henini, M. (2017) Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices. Journal of Electronic Materials, 46 (7). pp. 3851-3856. ISSN 1543-186X

Rodrigues, D.H., Brasil, M.J.S.P., Orlita, M., Kunc, J., Galeti, H.V.A., Henini, M., Taylor, D. and H.V.A., Y.G. (2016) Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes. Journal of Physics D: Applied Physics, 49 (16). ISSN 1361-6463

Conference or Workshop Item

Herval, L.K S., Galeti, H.V.A., Orsi Gordo, V., Galvao Gobato, Y., Brasil, M.J.S.P., Taylor, D. and Henini, M. (2014) Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well. In: 29th Symposium on Microelectronics Technology and Devices (SBMicro) 2014, 1-5 September 2014, Aracaju-Sergipe, Brazil.