Triazine-based graphitic carbon nitride: a two-dimensional semiconductor

Siller-Algara, Gerardo and Severin, Nikolai and Chong, Samantha Y. and Björkman, Torbjörn and Palgrave, Robert G. and Laybourn, Andrea and Antonietti, Markus and Khimyak, Yaroslav Z. and Krasheninnikov, Arkady V. and Rabe, Jürgen P. and Kaiser, Ute and Cooper, Andrew I. and Thomas, Arne and Bojdys, Michael J. (2014) Triazine-based graphitic carbon nitride: a two-dimensional semiconductor. Angewandte Chemie International Edition, 53 (29). pp. 7540-7455. ISSN 1521-3773

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Abstract

Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes.

Item Type: Article
Schools/Departments: University of Nottingham, UK > Faculty of Engineering
Identification Number: 10.1002/anie.201402191
Depositing User: Eprints, Support
Date Deposited: 08 Sep 2017 10:42
Last Modified: 13 Oct 2017 06:49
URI: http://eprints.nottingham.ac.uk/id/eprint/45580

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