Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots

Makarovsky, Oleg and Turyanska, Lyudmila and Mori, N. and Greenaway, Mark and Eaves, Laurence and Patanè, Amalia and Fromhold, Mark and Lara-Avila, Samuel and Kubatkin, Sergey and Yakimova, Rositsa (2017) Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots. 2D Materials, 4 (3). 031001. ISSN 2053-1583

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Abstract

We report a simultaneous increase of carrier concentration, mobility and photoresponsivity when SiC-grown graphene is decorated with a surface layer of colloidal PbS quantum dots, which act as electron donors. The charge on the ionised dots is spatially correlated with defect charges on the SiC-graphene interface, thus enhancing both electron carrier density and mobility. This charge-correlation model is supported by Monte Carlo simulations of electron transport and used to explain the unexpected 3-fold increase of mobility with increasing electron density. The enhanced carrier concentration and mobility give rise to Shubnikov-de Haas oscillations in the magnetoresistance, which provide an estimate of the electron cyclotron mass in graphene at high densities and Fermi energies up to 1.2 × 1013 cm-2 and 400 meV, respectively.

Item Type: Article
Keywords: SiC-graphene, Unipolar charge correlation, Colloidal quantum dots, Monte Carlo simulations
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1088/2053-1583/aa76bb
Depositing User: Eprints, Support
Date Deposited: 06 Jun 2017 14:35
Last Modified: 14 Oct 2017 20:52
URI: http://eprints.nottingham.ac.uk/id/eprint/43417

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