Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dotsTools Makarovsky, Oleg and Turyanska, Lyudmila and Mori, N. and Greenaway, Mark and Eaves, Laurence and Patanè, Amalia and Fromhold, Mark and Lara-Avila, Samuel and Kubatkin, Sergey and Yakimova, Rositsa (2017) Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots. 2D Materials, 4 (3). 031001. ISSN 2053-1583
AbstractWe report a simultaneous increase of carrier concentration, mobility and photoresponsivity when SiC-grown graphene is decorated with a surface layer of colloidal PbS quantum dots, which act as electron donors. The charge on the ionised dots is spatially correlated with defect charges on the SiC-graphene interface, thus enhancing both electron carrier density and mobility. This charge-correlation model is supported by Monte Carlo simulations of electron transport and used to explain the unexpected 3-fold increase of mobility with increasing electron density. The enhanced carrier concentration and mobility give rise to Shubnikov-de Haas oscillations in the magnetoresistance, which provide an estimate of the electron cyclotron mass in graphene at high densities and Fermi energies up to 1.2 × 1013 cm-2 and 400 meV, respectively.
Actions (Archive Staff Only)
|
From 30 July 2018 the research publications of UK based University of Nottingham authors will be handled through the Research Information System (RIS).
To deposit an article after this date please Login to RIS and use the Outputs tab to Add New Output.
(See this blog for further information about this transition.)
To deposit an article after this date please Login to RIS and use the Outputs tab to Add New Output.
(See this blog for further information about this transition.)
Tools
Tools
