UIS failure mechanism of SiC power MOSFETs

Fayyaz, Asad and Castellazzi, Alberto and Romano, Gianpaolo and Riccio, Michele and Urresti, J. and Wright, Nick (2016) UIS failure mechanism of SiC power MOSFETs. In: 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016), 7-9 November 2016, Fayetteville, Arkansas, USA.

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Abstract

This paper investigates the failure mechanism of SiC power MOSFETs during avalanche breakdown under unclamped inductive switching (UIS) test regime. Switches deployed within motor drive applications could experience undesired avalanche breakdown events. Therefore, avalanche ruggedness is an important feature of power devices enabling snubber-less converter design and is also a desired feature in certain applications such as automotive. It is essential to thoroughly characterize SiC power MOSFETs for better understanding of their robustness and more importantly of their corresponding underling physical mechanisms responsible for failure in order to inform device design and technology evolution. Experimental results during UIS at failure and 2D TCAD simulation results are presented in this study.

Item Type: Conference or Workshop Item (Paper)
Additional Information: doi:10.1109/WiPDA.2016.7799921
Keywords: Silicon carbide; MOSFET; Avalanche breakdown; Avalanche ruggedness; Unclamped inductive switching
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Related URLs:
Depositing User: Burns, Rebecca
Date Deposited: 31 Mar 2017 09:46
Last Modified: 02 Apr 2017 00:48
URI: http://eprints.nottingham.ac.uk/id/eprint/41655

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