Highly-mismatched InAs/InSe heterojunction diodes

Velichko, A. and Kudrynskyi, Zakhar R. and Di Paola, D.M. and Makarovsky, Oleg and Kesaria, M. and Krier, A. and Sandall, I.C. and Tan, C.H. and Kovalyuk, Zakhar D. and Patanè, Amalia (2016) Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109 (18). 182115/1-182115/4. ISSN 1077-3118

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Abstract

We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of 10[superscript]4 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.

Item Type: Article
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1063/1.4967381
Depositing User: Eprints, Support
Date Deposited: 04 Jan 2017 13:38
Last Modified: 14 Oct 2017 08:28
URI: http://eprints.nottingham.ac.uk/id/eprint/39578

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