Low parasitic inductance multi-chip SiC devices packaging technology

Li, Jianfeng and Mouawad, Bassem and Castellazzi, Alberto and Friedrichs, Peter and Johnson, Christopher Mark (2016) Low parasitic inductance multi-chip SiC devices packaging technology. In: 18th European Conference on Power Electronics and Applications (EPE’16-ECCE), 5-8 Sept. 2016, Karlsruhe - Rheinstetten, Germany.

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Abstract

This paper presents a novel packaging structure which employs stacked substrate and flexible printed circuit board (PCB) to obtain very low parasitic inductance and hence feature high switching speed SiC power devices. A half-bridge module aimed at blocking voltage up to 2.5kV has been designed to accommodate 8 SiC JFETs and 4 SiC diodes. Electromagnetic simulation results reveal extremely low inductance values of the major loops. Then the prototyping of the designed package including the assembly process, all the electrical test to evaluate the electrical performance are presented.

Item Type: Conference or Workshop Item (Paper)
Keywords: Wide bandgap devices, High frequency power converter, Silicon Carbide (SiC), Packaging, high voltage power converters, JFET, Wind energy
Schools/Departments: University of Nottingham UK Campus > Faculty of Engineering > Department of Electrical and Electronic Engineering
Related URLs:
URLURL Type
http://www.epe2016.com/Organisation
Depositing User: Burns, Rebecca
Date Deposited: 03 Oct 2016 11:20
Last Modified: 11 Oct 2016 08:59
URI: http://eprints.nottingham.ac.uk/id/eprint/37316

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