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Jump to: Article Number of items: 2. ArticleCastellazzi, Alberto, Fayyaz, Asad, Romano, G., Yang, Li, Riccio, M. and Irace, A. (2016) SiC power MOSFETs performance, robustness and technology maturity. Microelectronics Reliability, 58 . pp. 164-176. ISSN 0026-2714 Fayyaz, A., Yang, L., Riccio, M., Castellazzi, Alberto and Irace, A. (2014) Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectronics Reliability, 54 (9-10). pp. 2185-2190. ISSN 0026-2714 |