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Number of items: 10.

Article

Castellazzi, Alberto, Fayyaz, Asad and Kraus, Rainer (2018) SiC MOSFET device parameter spread and ruggedness of parallel multichip structures. Materials Science Forum, 924 . pp. 811-817. ISSN 1662-9752

Fayyaz, Asad, Romano, Gianpaolo, Urresti, Jesus, Riccio, Michele, Castellazzi, Alberto, Irace, Andrea and Wright, Nick (2017) A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs. Energies, 10 (4). 452/1-452/15. ISSN 1996-1073

Romano, Gianpaolo, Fayyaz, Asad, Riccio, Michele, Maresca, Luca, Breglio, Giovanni, Castellazzi, Alberto and Irace, Andrea (2016) A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics, 4 (3). pp. 978-987. ISSN 2168-6785

Castellazzi, Alberto, Fayyaz, Asad, Romano, G., Yang, Li, Riccio, M. and Irace, A. (2016) SiC power MOSFETs performance, robustness and technology maturity. Microelectronics Reliability, 58 . pp. 164-176. ISSN 0026-2714

Conference or Workshop Item

Zhu, Siwei, Fayyaz, Asad and Castellazzi, Alberto (2018) Static and dynamic TSEPs of SiC and GaN transistors. In: 9th International Conference on Power Electronics, Machines and Drives (PEMD 2018), 17-19 April 2018, Liverpool, UK.

Fayyaz, Asad, Castellazzi, Alberto, Romano, G., Riccio, M., Urresti, J. and Wright, N. (2017) Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs. In: 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 28 May-1 June 2017, Sapporo, Japan.

Castellazzi, Alberto, Fayyaz, Asad, Romano, Gianpaolo, Riccio, Michele, Irace, Andrea, Urresti-Ibanez, Jesus and Wright, Nick (2017) Transient out-of-SOA robustness of SiC power MOSFETs. In: 2017 IEEE International Reliability Physics Symposium (IRPS 2017), 2-6 Apr 2017, Monterey, California, USA.

Fayyaz, Asad, Castellazzi, Alberto, Romano, Gianpaolo, Riccio, Michele, Urresti, J. and Wright, Nick (2016) UIS failure mechanism of SiC power MOSFETs. In: 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016), 7-9 November 2016, Fayetteville, Arkansas, USA.

Romano, Gianpaolo, Riccio, Michele, Maresca, Luca, Fayyaz, Asad and Castellazzi, Alberto (2016) Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs. In: 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 12-16 Jun 2016, Prague, Czech Republic.

Thesis (University of Nottingham only)

Fayyaz, Asad (2018) Performance and robustness characterisation of SiC power MOSFETs. PhD thesis, University of Nottingham.

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