Browse by Authors and EditorsJump to: Article Number of items: 3. ArticleFayyaz, A., Romano, G. and Castellazzi, Alberto (2016) Body diode reliability investigation of SiC power MOSFETs. Microelectronics Reliability, 64 . pp. 530-534. ISSN 0026-2714 Fayyaz, A. and Castellazzi, A. (2015) High temperature pulsed-gate robustness testing of SiC power MOSFETs. Microelectronics Reliability, 55 (9-10). pp. 1724-1728. ISSN 0026-2714 Fayyaz, A., Yang, L., Riccio, M., Castellazzi, Alberto and Irace, A. (2014) Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectronics Reliability, 54 (9-10). pp. 2185-2190. ISSN 0026-2714 |