• Login
• Admin

Bhuiyan, Mahabub Alam (2019) The Novel Two-Dimensional van der Waals Crystal InSe and its Magnetic Doping. PhD thesis, University of Nottingham.

PDF (Thesis - as examined) - Repository staff only - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader Download (4MB) Request Thesis

Abstract

This thesis focusses on the electronic properties of the novel two dimensional (2D) van der Waals (vdW) crystal InSe. It examines the integration of InSe in graphene-based field effect transistors (FETs) and the incorporation of transition metals in InSe to create new magnetic materials.

InSe is employed in graphene-based FETs as an electrically and optically active capping layer to “modulation-dope” and photosensitise an adjacent graphene layer. This leads to a “giant” quantum Hall (QH) plateau at a filling factor v = 2 in the magnetoresistance of graphene that persists over a wide range of magnetic fields. Furthermore, the optical excitation of the FETs changes the resistance of the graphene layer. The sign of the Hall voltage and of the v = 2 QH plateau persists over a wide range of temperatures of up to T ~ 200K and can be controlled by an appropriate combination of gate voltages and optical illumination. These phenomena involve the charge transfer at the InSe/graphene interface, offering opportunities for optoelectronics and quantum metrology.

Also, we studied a new hybrid material system, which comprises InSe and ferromagnetic Fe-islands. We observed that unlike many traditional semiconductors, the electronic properties of pristine InSe are largely preserved after the incorporation of Fe. Also, this system exhibits ferromagnetic resonances and a large uniaxial magnetic anisotropy at room temperature, offering opportunities for the development of functional devices that integrate magnetic and semiconducting properties within the same material system.

Item Type:	Thesis (University of Nottingham only) (PhD)
Supervisors:	Patanè, Amalia Makarovsky, Oleg
Keywords:	graphene, graphene-based field effect transistors, InSe
Subjects:	Q Science > QC Physics > QC501 Electricity and magnetism T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics
Faculties/Schools:	UK Campuses > Faculty of Science > School of Physics and Astronomy
Item ID:	56169
Depositing User:	Bhuiyan, Mahabub
Date Deposited:	25 Jul 2019 08:26
Last Modified:	07 May 2020 11:30
URI:	https://eprints.nottingham.ac.uk/id/eprint/56169

Actions (Archive Staff Only)

Edit View