Moiré-modulated conductance of hexagonal boron nitride tunnel barriers

Summerfield, Alex, Kozikov, Aleksey, Cheng, Tin S., Davies, Andrew, Cho, Yong-Jin, Khlobystov, Andrei N., Mellor, Christopher J., Foxon, C. Thomas, Watanabe, Kenji, Taniguchi, Takashi, Eaves, Laurence, Novoselov, Kostya S., Novikov, Sergei V. and Beton, Peter H. (2018) Moiré-modulated conductance of hexagonal boron nitride tunnel barriers. Nano Letters . ISSN 1530-6984

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Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré superlattice between the hBN and an underlying highly ordered pyrolytic graphite (HOPG) substrate. This variation is attributed to a periodc modulation of the local density of states and occurs for both exfoliated hBN barriers and epitaxially grown layers. The epitaxial barriers also exhibit enhanced conductance at localized subnanometer regions which are attributed to exposure of the substrate to a nitrogen plasma source during the high temperature growth process. Our results show clearly a spatial periodicity of tunnel current due to the formation of a moiré superlattice and we argue that this can provide a mechanism for elastic scattering of charge carriers for similar interfaces embedded in graphene/hBN resonant tunnel diodes.

Item Type: Article
Additional Information: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society 2018 after peer review and technical editing by t he publisher. To access the final edited and published work see
Keywords: boron nitride ; epitaxy ; growth ; tunnelling ; superlattice ; moiré ; heterostructure
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number:
Depositing User: Summerfield, Alex
Date Deposited: 10 Jul 2018 10:56
Last Modified: 04 May 2020 19:41

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