Highly-integrated power cell for high-power wide band-gap power converters

Espina, Jordi, Ahmadi, Behzad, Empringham, Lee, De Lillo, Liliana and Johnson, Christopher Mark (2017) Highly-integrated power cell for high-power wide band-gap power converters. In: 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia), 3-7 June 2017, Kaohsiung, Taiwan.

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The fast switching speeds and low specific conduction losses of wide band-gap semiconductors allow the realisation of high-frequency, high power-density switching converters with dramatically reduced passive component requirements compared to Silicon technology. However, careful attention must be paid to switching cell design to mitigate the effects of circuit parasitics and fast voltage transitions which would otherwise limit the attainable switching speed and lead to increased levels of EMI. This paper presents a modular, power-cell solution which allows the creation of any two-level topology converter. The cell structure enables fast switching of wide bandgap semiconductor devices while allowing high power converters to be fabricated using multiple, smaller commutation cells. Close integration of semiconductor dies, decoupling capacitors, gate drives and an output filter with a single ceramic substrate to act as the thermal path allows dramatic increases in power density without compromising converter performance

Item Type: Conference or Workshop Item (Paper)
RIS ID: https://nottingham-repository.worktribe.com/output/864084
Additional Information: doi:10.1109/IFEEC.2017.7992433 ISBN:978-1-5090-5157-1 © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works
Keywords: Power electronics integration; wide bandgap semiconductors; power-density
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Depositing User: Burns, Rebecca
Date Deposited: 23 Jan 2018 11:14
Last Modified: 04 May 2020 18:48
URI: https://eprints.nottingham.ac.uk/id/eprint/49289

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