Electrical and thermal failure modes of 600 V p-gate GaN HEMTs

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Oeder, Thorsten, Castellazzi, Alberto and Pfost, Martin (2017) Electrical and thermal failure modes of 600 V p-gate GaN HEMTs. Microelectronics Reliability, 76-77 . pp. 321-326. ISSN 0026-2714

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Official URL: http://www.sciencedirect.com/science/article/pii/S0026271417302342

Abstract

A study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations. The electrical failure mode seems to be an electrical field breakdown in the structure which is caused by excessive carrier concentration, rather than primary thermal generated. Accordingly, a thermal failure mode is observed, which features a distinctive behaviour and seems to be similar to schottky-gate HEMTs. Concerning the electrical failure mode, a specific p-gate HEMT short-circuit safe operating area (SCSOA) is presented as a novelty. However, a short-circuit capability of up to 520 V can be achieved, regarding the design of the gate-drive circuit.

Item Type:	Article
RIS ID:	https://nottingham-repository.worktribe.com/output/966853
Keywords:	Gallium nitride (GaN), High electron mobility transistor (HEMT), P-doped gate (p-gate), Short-circuit, Safe operating area, Electrical failure, Thermal failure
Schools/Departments:	University of Nottingham, UK > Faculty of Engineering
Identification Number:	10.1016/j.microrel.2017.06.046
Depositing User:	Eprints, Support
Date Deposited:	25 Aug 2017 13:06
Last Modified:	04 May 2020 19:55
URI:	https://eprints.nottingham.ac.uk/id/eprint/45148

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