Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayersTools Wang, M. and Wadley, P. and Campion, R.P. and Rushforth, A.W. and Edmonds, K.W. and Gallagher, B.L. and Charlton, T.R. and Kinane, C.J. and Langridge, S. (2015) Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers. Journal of Applied Physics, 118 (5). 053913/1-053913/5. ISSN 0021-8979 Full text not available from this repository.
Official URL: http://aip.scitation.org/doi/10.1063/1.4928206
AbstractWe report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.
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