Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy

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Vuong, T.Q.P., Cassabois, G., Valvin, P., Rousseau, E., Summerfield, A., Mellor, C.J., Cho, Y., Cheng, T.S., Albar, J.D., Eaves, Laurence, Foxon, C.T., Beton, Peter H., Novikov, Sergei V. and Gil, B. (2017) Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy. 2D Materials, 4 (2). 021023/1-021023/7. ISSN 2053-1583

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Item Type: Article
RIS ID: https://nottingham-repository.worktribe.com/output/850832
Keywords: boron nitride, molecular beam epitaxy, deep ultraviolet
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1088/2053-1583/aa604a
Depositing User: Eprints, Support
Date Deposited: 07 Apr 2017 14:23
Last Modified: 04 May 2020 18:37
URI: https://eprints.nottingham.ac.uk/id/eprint/41839

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