Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices

Tools

Gordo, V. Orsi, Gobato, Y.G., Galeti, H.V.A., Brasil, M.J.S.P., Taylor, David and Henini, M. (2017) Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices. Journal of Electronic Materials, 46 (7). pp. 3851-3856. ISSN 1543-186X

Full text not available from this repository.

Abstract

In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnetic fields up to 15 T and using linearly polarized laser excitation. It was observed that the QRs’ PL intensity and the circular polarization degree (CPD) oscillate periodically with applied voltage under high magnetic fields at 2 K. Our results demonstrate an effective voltage control of the optical and spin properties of InGaAs QRs inserted into RTDs.

Item Type: Article
RIS ID: https://nottingham-repository.worktribe.com/output/848477
Additional Information: (c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
Keywords: Quantum rings, photoluminescence, spin polarization, resonant tunneling
Schools/Departments: University of Nottingham, UK > Faculty of Science > School of Physics and Astronomy
Identification Number: 10.1007/s11664-017-5391-2
Depositing User: Henini, Mohamed
Date Deposited: 31 Mar 2017 09:53
Last Modified: 04 May 2020 18:36
URI: https://eprints.nottingham.ac.uk/id/eprint/41566

Actions (Archive Staff Only)

Edit View Edit View