Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodesTools Rodrigues, D.H., Brasil, M.J.S.P., Orlita, M., Kunc, J., Galeti, H.V.A., Henini, M., Taylor, D. and H.V.A., Y.G. (2016) Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes. Journal of Physics D: Applied Physics, 49 (16). ISSN 1361-6463 Full text not available from this repository.AbstractWe have investigated the polarization-resolved electroluminescence (EL) of a p–i–n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices.
Actions (Archive Staff Only)
|
Tools
Tools
