Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs

Tools

Fayyaz, A., Yang, L., Riccio, M., Castellazzi, Alberto and Irace, A. (2014) Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectronics Reliability, 54 (9-10). pp. 2185-2190. ISSN 0026-2714

Full text not available from this repository.

Official URL: http://www.sciencedirect.com/science/article/pii/S0026271414002741

Abstract

This paper presents an extensive electro-thermal characterisation of latest generation silicon carbide (SiC) Power MOSFETs under unclamped inductive switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche ruggedness limits of commercial SiC MOSFETs and assess their aging under repetitive stress conditions. Both a functional and a structural characterisation of the transistors is presented, with the aim of informing future device technology development for robust and reliable power system development.

Item Type:	Article
RIS ID:	https://nottingham-repository.worktribe.com/output/734690
Keywords:	SiC; Power MOSFETs; Wide bandgap; Device characterisation; Reliability; Robustness
Schools/Departments:	University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Identification Number:	10.1016/j.microrel.2014.07.078
Depositing User:	Eprints, Support
Date Deposited:	03 Aug 2016 13:20
Last Modified:	04 May 2020 16:52
URI:	https://eprints.nottingham.ac.uk/id/eprint/35685

Actions (Archive Staff Only)

Edit View

LoginAdmin