Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter

Gurpinar, Emre, Castellazzi, Alberto, Iannuzzo, Francesco, Yang, Yongheng and Blaabjerg, Frede (2016) Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter. In: IEEE Energy Conversion Congress & Expo (ECCE 2016), 18-22 Sept 2016, Milwaukee, Wisconsin, USA. (In Press)

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In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours based on SPICE model of the converter is analysed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.

Item Type: Conference or Workshop Item (Paper)
RIS ID: https://nottingham-repository.worktribe.com/output/782187
Additional Information: © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Keywords: Wide Bandgap (WBG) Power Devices, Gallium-Nitride (GaN), HEMT, Three-Level Active Neutral Point Clamped (3L-ANPC) Converter, Photovoltaic (PV) Systems
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
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Depositing User: Burns, Rebecca
Date Deposited: 19 Jul 2016 08:54
Last Modified: 04 May 2020 17:43
URI: https://eprints.nottingham.ac.uk/id/eprint/35035

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