A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs

Tools

Romano, Gianpaolo, Fayyaz, Asad, Riccio, Michele, Maresca, Luca, Breglio, Giovanni, Castellazzi, Alberto and Irace, Andrea (2016) A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics, 4 (3). pp. 978-987. ISSN 2168-6785

Full text not available from this repository.

Abstract

The behavior of Silicon Carbide Power MOSFETs under stressful short circuit conditions is investigated in this paper. Illustration of two different short-circuit failure phenomena for Silicon Carbide Power MOSFETs are thoroughly reported. Experimental evidences and TCAD electro-thermal simulations are exploited to describe and discriminate the failure sources. Physical causes are finally investigated and explained by means of properly calibrated numerical investigations, and are reported along with their effects on devices short-circuit capability.

Item Type: Article
RIS ID: https://nottingham-repository.worktribe.com/output/975264
Additional Information: (c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Keywords: Short-circuit failure mechanism, short-circuit ruggedness, Silicon Carbide (SiC) Power MOSFETs, thermal runaway
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Identification Number: 10.1109/JESTPE.2016.2563220
Depositing User: Burns, Rebecca
Date Deposited: 25 May 2016 11:22
Last Modified: 04 May 2020 20:01
URI: https://eprints.nottingham.ac.uk/id/eprint/33509

Actions (Archive Staff Only)

Edit View Edit View