Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

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Fay, Mike W. and Han, Y. and Brown, Paul D. and Harrison, Ian and Hilton, K.P. and Munday, A. and Wallis, D. and Balmer, R.S. and Uren, M.J. and Martin, T. (2008) Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content. Journal of Applied Physics, 103 (7). 074501. ISSN 0021-8979

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Abstract

The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is

examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:Ti ratio than is required for related AuPdAlTi contact schemes and through the degraded temperature dependent resistance behaviour of the annealed AuPtAlTi contacts.

Item Type: Article
RIS ID: https://nottingham-repository.worktribe.com/output/704598
Additional Information: Pre-print - originally submitted version (August 2007), prior to referee's comments and corrections.
Keywords: N-TYPE GAN FIELD-EFFECT TRANSISTORS THERMAL-STABILITY RESISTANCE TI MICROSTRUCTURE MULTILAYERS PERFORMANCE
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Identification Number: https://doi.org/10.1063/1.2890978
Depositing User: Fay, Dr Michael
Date Deposited: 31 Aug 2011 08:28
Last Modified: 04 May 2020 16:27
URI: https://eprints.nottingham.ac.uk/id/eprint/1526

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