Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al contentTools Fay, Mike W. and Han, Y. and Brown, Paul D. and Harrison, Ian and Hilton, K.P. and Munday, A. and Wallis, D. and Balmer, R.S. and Uren, M.J. and Martin, T. (2008) Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content. Journal of Applied Physics, 103 (7). 074501. ISSN 0021-8979 Full text not available from this repository.
Official URL: http://jap.aip.org/resource/1/japiau/v103/i7/p074501_s1
AbstractThe effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is
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