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Jump to: Article Number of items: 1. ArticleLiang, Guangda and Wang, Yiming and Han, Lin and Yang, Zai-xing and Xin, Qian and Kudrynskyi, Zakhar R. and Kovalyuk, Zakhar D. and Patanè, Amalia and Song, Aimin (2018) Improved performance of InSe field-effect transistors by channel encapsulation. Semiconductor Science and Technology, 33 (6). 06LT01/1-06LT01/5. ISSN 1361-6641 |
From the 1st Oct 2021, the research publications and student eTheses of University of Nottingham Ningbo China authors will be handled through the UNNC Research Information System (RIS).
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If you are a UNNC author, please login to the UNNC RIS in order to deposit articles and etheses after this date, or contact UNNCRIS@nottingham.edu.cn if you have any enquiries in regard to this change.
