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Number of items: 3.

Article

Fayyaz, A., Romano, G. and Castellazzi, Alberto (2016) Body diode reliability investigation of SiC power MOSFETs. Microelectronics Reliability, 64 . pp. 530-534. ISSN 0026-2714

Castellazzi, Alberto, Fayyaz, Asad, Romano, G., Yang, Li, Riccio, M. and Irace, A. (2016) SiC power MOSFETs performance, robustness and technology maturity. Microelectronics Reliability, 58 . pp. 164-176. ISSN 0026-2714

Conference or Workshop Item

Fayyaz, Asad, Castellazzi, Alberto, Romano, G., Riccio, M., Urresti, J. and Wright, N. (2017) Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs. In: 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 28 May-1 June 2017, Sapporo, Japan.

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