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Jump to: Article Number of items: 1. ArticlePrando, G.A. and Orsi Gordo, V. and Puustinen, J. and Hilska, J. and Alghamdi, H.M. and Som, G. and Gunes, M. and Akyol, M. and Souto, S. and Rodrigues, A.D. and Galeti, H.V.A. and Henini, M. and Gobato, Y.Galvão and Guina, M. (2018) Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 33 (8). 084002. ISSN 0268-1242 |
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If you are a UNNC author, please login to the UNNC RIS in order to deposit articles and etheses after this date, or contact Library@nottingham.edu.cn if you have any enquiries in regard to this change.
