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Number of items: 3. Fayyaz, Asad, Castellazzi, Alberto, Romano, G., Riccio, M., Urresti, J. and Wright, N. (2017) Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs. In: 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 28 May-1 June 2017, Sapporo, Japan. Castellazzi, Alberto, Fayyaz, Asad, Romano, G., Yang, Li, Riccio, M. and Irace, A. (2016) SiC power MOSFETs performance, robustness and technology maturity. Microelectronics Reliability, 58 . pp. 164-176. ISSN 0026-2714 Fayyaz, A., Yang, L., Riccio, M., Castellazzi, Alberto and Irace, A. (2014) Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectronics Reliability, 54 (9-10). pp. 2185-2190. ISSN 0026-2714 |
