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Number of items: 4.

Article

Olejnik, K. and Schuler, V. and Marti, X. and Novák, V. and Kaspar, Z. and Wadley, P. and Campion, R.P. and Edmonds, K.W. and Gallagher, B.L. and Garces, J. and Baumgartner, M. and Gambardella, P. and Jungwirth, T. (2017) Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility. Nature Communications, 8 . 15434/1-15434/7. ISSN 2041-1723

Nádvornik, L. and Olejnik, K. and Němec, P. and Novák, V. and Janda, T. and Wunderlich, J. and Trojánek, F. and Jungwirth, T. (2016) Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction. Physical Review B, 94 (7). 075306/1-075306/6. ISSN 2469-9969

Kriegner, D. and Výborný, K. and Olejnik, K. and Reichlová, H. and Novák, V. and Marti, X. and Gazquez, J. and Saidl, V. and Němec, P. and Volobuev, V.V. and Springholz, G. and Holy, Vaclav and Jungwirth, T. (2016) Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe. Nature Communications, 7 (11623). pp. 1-7. ISSN 2041-1723

Wadley, P. and Howells, Bryn and Železný, J. and Andrews, C. and Hills, V. and Campion, R.P. and Novák, V. and Olejnik, K. and Maccherozzi, F. and Dhesi, S.S. and Martin, S. and Wagner, T. and Wunderlich, J. and Freimuth, F. and Mokrousov, Y. and Kunes, J. and Chauhan, Jasbinder and Grzybowski, M.J. and Rushforth, A.W. and Edmonds, K.W. and Gallagher, B.L. and Jungwirth, T. (2016) Electrical switching of an antiferromagnet. Science, 351 (6273). pp. 587-590. ISSN 1095-9203

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