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Number of items: 10. ArticleCastellazzi, Alberto and Fayyaz, Asad and Kraus, Rainer (2018) SiC MOSFET device parameter spread and ruggedness of parallel multichip structures. Materials Science Forum, 924 . pp. 811-817. ISSN 1662-9752 Fayyaz, Asad and Romano, Gianpaolo and Urresti, Jesus and Riccio, Michele and Castellazzi, Alberto and Irace, Andrea and Wright, Nick (2017) A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs. Energies, 10 (4). 452/1-452/15. ISSN 1996-1073 Romano, Gianpaolo and Fayyaz, Asad and Riccio, Michele and Maresca, Luca and Breglio, Giovanni and Castellazzi, Alberto and Irace, Andrea (2016) A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics, 4 (3). pp. 978-987. ISSN 2168-6785 Castellazzi, Alberto and Fayyaz, Asad and Romano, G. and Yang, Li and Riccio, M. and Irace, A. (2016) SiC power MOSFETs performance, robustness and technology maturity. Microelectronics Reliability, 58 . pp. 164-176. ISSN 0026-2714 Conference or Workshop ItemZhu, Siwei and Fayyaz, Asad and Castellazzi, Alberto (2018) Static and dynamic TSEPs of SiC and GaN transistors. In: 9th International Conference on Power Electronics, Machines and Drives (PEMD 2018), 17-19 April 2018, Liverpool, UK. Fayyaz, Asad and Castellazzi, Alberto and Romano, G. and Riccio, M. and Urresti, J. and Wright, N. (2017) Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs. In: 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 28 May-1 June 2017, Sapporo, Japan. Castellazzi, Alberto and Fayyaz, Asad and Romano, Gianpaolo and Riccio, Michele and Irace, Andrea and Urresti-Ibanez, Jesus and Wright, Nick (2017) Transient out-of-SOA robustness of SiC power MOSFETs. In: 2017 IEEE International Reliability Physics Symposium (IRPS 2017), 2-6 Apr 2017, Monterey, California, USA. Fayyaz, Asad and Castellazzi, Alberto and Romano, Gianpaolo and Riccio, Michele and Urresti, J. and Wright, Nick (2016) UIS failure mechanism of SiC power MOSFETs. In: 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016), 7-9 November 2016, Fayetteville, Arkansas, USA. Romano, Gianpaolo and Riccio, Michele and Maresca, Luca and Fayyaz, Asad and Castellazzi, Alberto (2016) Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs. In: 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 12-16 Jun 2016, Prague, Czech Republic. Thesis (University of Nottingham only)Fayyaz, Asad (2018) Performance and robustness characterisation of SiC power MOSFETs. PhD thesis, University of Nottingham. |
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