Browse by Authors and Editors
Jump to: Article Number of items: 3. ArticleFayyaz, A. and Romano, G. and Castellazzi, Alberto (2016) Body diode reliability investigation of SiC power MOSFETs. Microelectronics Reliability, 64 . pp. 530-534. ISSN 0026-2714 Fayyaz, A. and Castellazzi, A. (2015) High temperature pulsed-gate robustness testing of SiC power MOSFETs. Microelectronics Reliability, 55 (9-10). pp. 1724-1728. ISSN 0026-2714 Fayyaz, A. and Yang, L. and Riccio, M. and Castellazzi, Alberto and Irace, A. (2014) Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectronics Reliability, 54 (9-10). pp. 2185-2190. ISSN 0026-2714 |
From the 1st Oct 2021, the research publications and student eTheses of University of Nottingham Ningbo China authors will be handled through the UNNC Research Information System (RIS).
If you are a UNNC author, please login to the UNNC RIS in order to deposit articles and etheses after this date, or contact Library@nottingham.edu.cn if you have any enquiries in regard to this change.
If you are a UNNC author, please login to the UNNC RIS in order to deposit articles and etheses after this date, or contact Library@nottingham.edu.cn if you have any enquiries in regard to this change.
