Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsNTools Eßer, F., Winner, S., Patanè, Amalia, Helm, M. and Schneider, H. (2016) Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN. Applied Physics Letters, 109 (18). 182113/1-182113/4. ISSN 1077-3118 Full text not available from this repository.
Official URL: http://aip.scitation.org/doi/10.1063/1.4966949
AbstractWe use time-resolved photoluminescence (PL) spectroscopy to study the recombination dynamics in Si-doped GaAsN semiconductor alloys with a nitrogen content up to 0.2%. The PL decay is predominantly monoexponential and exhibits a strong energy dispersion. We find ultra-short decay times on the high-energy side and long decay times on the low-energy side of the photoluminescence spectrum. This asymmetry can be explained by the existence of an additional non-radiative energy transfer channel and is consistent with previous studies on intrinsic GaAsN epilayers. However, the determined maximum decay times of GaAsN:Si are significantly reduced in comparison to undoped GaAsN. The determined excitonic mobility edge energy constantly decreases with an increase in the N content, in agreement with the two-level band anticrossing model.
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