Impact of stoichiometry and strain on Ge1−x Sn x alloys from first principles calculations

O’Donnell, Conor and Sanchez-Soares, Alfonso and Broderick, Christopher A and Greer, James C (2021) Impact of stoichiometry and strain on Ge1−x Sn x alloys from first principles calculations. Journal of Physics D: Applied Physics, 54 (24). p. 245103. ISSN 0022-3727

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Abstract

We calculate the electronic structure of germanium-tin (Ge1-x Sn x ) binary alloys for 0 ≤ x ≤ 1 using density functional theory (DFT). Relaxed alloys with semiconducting or semimetallic behaviour as a function of Sn composition x are identified, and the impact of epitaxial strain is investigated by constraining supercell lattice constants perpendicular to the [001] growth direction to the lattice constants of Ge, zinc telluride, or cadmium telluride substrates. It is found that application of 1% tensile strain reduces the Sn composition required to bring the (positive) direct band gap to zero by approximately 5% compared to a relaxed Ge1-x Sn x alloy having the same gap at Γ. On the other hand, compressive strain has comparatively less impact on the alloy band gap at Γ. Using DFT calculated alloy lattice and elastic constants, the critical thickness for Ge1-x Sn x thin films as a function of x and substrate lattice constant is estimated, and validated against supercell DFT calculations and experiment. The analysis correctly predicts the Sn composition range at which it becomes energetically favourable for Ge1-x Sn x /Ge to become amorphous. The influence of stoichiometry and strain is examined in relation to reducing the magnitude of the inverted ('negative') Γ7-Γ8+ band gap, which is characteristic of semimetallic alloy electronic structure. Based on our findings, strategies for engineering the semimetal-to-semiconductor transition via strain and quantum confinement in Ge1-x Sn x nanostructures are proposed. © 2021 IOP Publishing Ltd.

Item Type: Article
Keywords: critical thickness; density functional theory; electronic structure; energy band gap; germanium tin alloys; semimetal; semimetal-to-semiconductor transition
Schools/Departments: University of Nottingham Ningbo China > Faculty of Science and Engineering > Department of Electrical and Electronic Engineering
Identification Number: https://doi.org/10.1088/1361-6463/abed6f
Depositing User: QIU, Lulu
Date Deposited: 04 Jun 2021 01:53
Last Modified: 04 Jun 2021 01:53
URI: http://eprints.nottingham.ac.uk/id/eprint/65411

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