Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate

Jiang, Jie’an and Xu, Houqiang and Sheikhi, Moheb and Li, Liang and Yang, Zhenhai and Hoo, Jason and Guo, Shiping and Zeng, Yuheng and Guo, Wei and Ye, Jichun (2019) Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate. Optics Express, 27 (11). pp. 16195-16205. ISSN 1094-4087

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Abstract

The optical properties of hexagonal GaN microdisk arrays grown on sapphire substrates by selective area growth (SAG) technique were investigated both experimentally and theoretically. Whispering-gallery-mode (WGM) lasing is observed from various directions of the GaN pyramids collected at room temperature, with the dominant lasing mode being Transverse-Electric (TE) polarized. A relaxation of compressive strain in the lateral overgrown region of the GaN microdisk is illustrated by photoluminescence (PL) mapping and Raman spectroscopy. A strong correlation between the crystalline quality and lasing behavior of the GaN microdisks was also demonstrated.

Item Type: Article
Additional Information: © 2019 Optical Society of America. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.
Schools/Departments: University of Nottingham Ningbo China > Faculty of Science and Engineering > Department of Electrical and Electronic Engineering
Identification Number: https://doi.org/10.1364/OE.27.016195
Related URLs:
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https://www.osapublishing.org/oe/abstract.cfm?uri=oe-27-11-16195Publisher
Depositing User: Yu, Tiffany
Date Deposited: 03 Jul 2019 07:56
Last Modified: 03 Jul 2019 07:56
URI: http://eprints.nottingham.ac.uk/id/eprint/57056

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