SiC MOSFET device parameter spread and ruggedness of parallel multichip structures

Castellazzi, Alberto and Fayyaz, Asad and Kraus, Rainer (2018) SiC MOSFET device parameter spread and ruggedness of parallel multichip structures. Materials Science Forum, 924 . pp. 811-817. ISSN 1662-9752

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Abstract

This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mΩ rated commercial devices. Some major parameters are identified and selected, presenting experimental evidence of their impact during transient overload events. An advanced physics-based simulation model is then employed to extend the analysis to a more comprehensive set of parameters and operational conditions.

Item Type: Article
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Identification Number: https://doi.org/10.4028/www.scientific.net/msf.924.811
Depositing User: Eprints, Support
Date Deposited: 11 Sep 2018 09:39
Last Modified: 11 Sep 2018 09:39
URI: http://eprints.nottingham.ac.uk/id/eprint/54158

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