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Castellazzi, Alberto, Fayyaz, Asad and Kraus, Rainer (2018) SiC MOSFET device parameter spread and ruggedness of parallel multichip structures. Materials Science Forum, 924 . pp. 811-817. ISSN 1662-9752

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Abstract

This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mΩ rated commercial devices. Some major parameters are identified and selected, presenting experimental evidence of their impact during transient overload events. An advanced physics-based simulation model is then employed to extend the analysis to a more comprehensive set of parameters and operational conditions.

Item Type:	Article
Schools/Departments:	University of Nottingham, UK > Faculty of Engineering > Department of Electrical and Electronic Engineering
Identification Number:	https://doi.org/10.4028/www.scientific.net/msf.924.811
Depositing User:	Eprints, Support
Date Deposited:	11 Sep 2018 09:39
Last Modified:	11 Sep 2018 09:39
URI:	https://eprints.nottingham.ac.uk/id/eprint/54158

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